Skip to main content

Indian institute gets $12 million to push III-Vs

Indian institute gets $12 million to push III-Vs

IIT Kharagpur's RF industry veteran CTO is hoping to use new epitaxial capabilities to encourage India's flourishing design houses into compounds.

by Andy Extance
The Indian Institute of Technology (IIT) in Kharagpur has received $12 million in government funds to set up a semiconductor nano-growth facility.

The money was awarded specifically to Dhrubes Biswas, an RF compound semiconductor expert whose lengthy CV includes establishing the first 6-inch GaAs HBT process at Anadigics.

Now CTO and professor of electronics and electrical communication engineering at Kharagpur, Biswas told compoundsemiconductor.net that this money was primarily for RF front ends.

“In India, we have about 100 design companies in Bangalore, but none of them work in III-V,” Biswas observed. “My role as IIT's CTO is to motivate them into getting into front end, where compound semiconductors can have an impact, using our lab to give them prototypes.”

Having been awarded the money in July, Biswas is now buying MBE and MOCVD equipment to go into IIT Kharagpur’s existing Very Large Scale Integration (VLSI) electronics lab.

In the two years since he joined IIT Kharagpur, Biswas has already introduced III-As, III-P and SiGe processing to its highly-reputed electronics facility. This has been achieved in conjunction with a consortium of 14 companies, including Intel, Texas Instruments, National Semiconductor, Agilent and Analog Devices.

These firms provide funding to support an “open innovation platform” in which Kharagpur recruits high-end graduates to work on industry-guided PhDs, helping to develop and retain these skills in India.

Global ambition
Currently Biswas has 6 PhD students, but he hopes to expand his group’s size to 30. Likewise, his ambitions for the III-V capability at Kharagpur also reach considerably further than his already respectable achievements.

“I am on a quest to get a research innovation lab in IIT as well,” Biswas said. “I got the first $12 million dollars for the epi part, now I am trying to get $50 million for the remainder of the process.”

“Eventually we will end up with a complete innovation fab out of IIT Kharagpur which can make products using our design expertise for the local globalized business industry out of Bangalore, Hyderabad, or Delhi.”

Biswas is well qualified to deliver on these promises. When he joined Anadigics in 1999, the company proudly announced his inclusion in the list of 2000 Outstanding Scientists of the 20th Century.

This acclaim comes partly as a result of Biswas' role in founding Singapore's MBE Technology, which is now a part of IQE. He was also involved in the start-up phases at Mimix Broadband and set up the first 4-inch PHEMT process at Alpha Industries, which later became Skyworks.

Now back at Kharagpur, where he did his original undergraduate studies, Biswas is keen to apply his entrepreneurial tendencies in his home country, or to help others to follow in his footsteps.

“I've been dealing with compound semiconductors all through my life,” he explained, “and what I really want now is for people in India to understand III-Vs more, use them, build them locally and create a global business out of it.”

Comments

Popular posts from this blog

Freescale selling GaAs business to Skyworks

Freescale selling GaAs business to Skyworks The semiconductor giant has entered into an agreement to sell its RF power amplifier business to Skyworks, leaving a question mark hanging over the future of its "CS1" GaAs fab. Freescale Semiconductor has agreed to sell its GaAs power amplifier (PA) business to fellow RFIC manufacturer Skyworks Solutions. A spokesman for Freescale, which was acquired by a private equity consortium led by The Blackstone Group and The Carlyle Group in December 2006, confirmed that the deal had been struck, saying that it "represented good value for both companies". The agreement includes GaAs PA designs, intellectual property, inventory and product lines, although it does not include Freescale's "CS1" wafer fab, located in Tempe, Arizona, and the site for the company’s GaAs device production. As a result, a question mark now hangs over the future of that fab. Freescale says that it is looking at a number of potent...

GaN brings weather radar into digital age

Weather radar is one of the few areas in which electron tubes still dominate solid-state electronics, but this is set to change thanks to a system from Toshiba. The world's first weather radar that uses a high-power semiconductor module, based on GaN, has been installed at Japan’s Nagoya University. Toshiba Corporation says that its GaN field effect transistors (FETs) allow it to manufacture systems without the electron tubes that have previously been used in weather radar transmitter modules. 21st century weather radar The initial 9 GHz radar has been made for Nagoya's Hydrospheric Atmospheric Research Center using Toshiba’s existing X-band GaN FET technology, and came into operation on November 28. The conglomerate will produce further individual X-band GaN radars to order and will also use its C-band FETs to make radars that operate in the 5 GHz range. A Toshiba spokesperson said that the development of semiconductor weather radar was made possible by its GaN products, becau...

White LEDs offer radio-free wireless option

White LEDs offer radio-free wireless option A photonic alternative to WLAN has been shown to exceed 100 Mbit/s and could provide bandwidth in a currently unlicensed area of the spectrum, if it can conform to general illumination standards. Thanks to white LEDs, overhead lighting could soon be used to transmit data over a RF-free wireless connection. That's according to Joachim Walewski from Siemens Corporate Technology, who has modulated the light emission from white LEDs in order to make a 101 Mbit/s wireless link with a PiN diode photodetector. “With this, you can have interference-free communication,” Walewski pointed out, adding that the visible spectrum is currently free of any requirements for communication licenses. Siemens is currently exploring the technology in order to keep pace with a competing Japanese collaboration that expects to bring similar technology to market by 2011, Walewski says. His Munich-based team claims to be the first to have boosted ...